Optional EPAD Threshold Voltage Trimming by User
The basic EPAD MOSFET device is a monotonically
adjustable device, which means the device can normally
be e-trimmed to increase in threshold voltage and to
decrease in drain-on current as a function of a given input
bias voltage. Used as an in-circuit element for trimming or
setting a combination of voltage, current and/or on-
resistance characteristics, it can be set up to be e-trimmed
remotely and automatically. Once e-trimmed, the set
voltage and current levels are stored indefinitely inside the
device as a nonvolatile stored charge, which is not affected
during normal operation of the device, even when power is
turned off. A given EPAD device can be adjusted many
BENEFITS (cont.)
? Usable in environmentally sealed circuits
? No mechanical moving parts -- high G-shock
tolerance
? Improved reliability, dependability, dust and
moisture resistance
? Cost and labor savings
? Small footprint for high board density
applications
FEATURES
times to continually increase its threshold voltage. A pair
of EPAD devices can also be connected differentially such
that one device is used to adjust a parameter in one
direction and the other device is used to adjust the same
parameter in the other direction.
The ALD1108E/ALD1110E can be e-trimmed with an ALD
EPAD programmer to obtain the desired voltage and
current levels. They can also be e-trimmed as an active in-
system element in a user system, via user designed
interface circuitry. P N1 , P N2 , etc., are pins required for
optional e-trim of respective MOSFET devices. If unused,
these pins are to be connected to V- or ground. For more
information, see Application Note AN1108.
APPLICATIONS
? Precision PC-based electronic calibration
? Automated voltage trimming or setting
? Remote voltage or current adjustment of
inaccessible nodes
? PCMCIA based instrumentation trimming
? Electrically adjusted resistive load
? Temperature compensated current sources and
current mirrors
? Electrically trimmed/calibrated current sources
? Permanent precision preset voltage level shifter
? Low temperature coefficient voltage and/or current
bias circuits
? Multiple preset voltage bias circuits
? Multiple channel resistor pull-up or pull-down circuits
? Microprocessor based process control systems
? Portable data acquisition systems
? Battery operated terminals and instruments
? Remote telemetry systems
? E-trimmable gain amplifiers
? Low level signal conditioning
? Sensor and transducer bias currents
? Neural networks
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Electrically Programmable Analog Device
Proven, non-volatile CMOS technology
Operates from 2V, 3V, 5V to 10V
Flexible basic circuit building block and design
element
Very high resolution -- average e-trim voltage
resolution of 0.1mV
Wide dynamic range -- current levels from 0.1 μ A
to 3000 μ A
Voltage adjustment range from 1.000V to 3.000V
in 0.1mV steps
Typical 10-year drift of less than 2mV
Usable in voltage mode or current mode
High input impedance -- 1012 ?
Very high DC current gain -- greater than 109
Device operating current has positive temperature
coefficient range and negative temperature
coefficient range with cross-over zero temperature
coefficient current level at 68 μ A
Tight matching and tracking of on-resistance
between different devices with e-trim
Very low input currents and leakage currents
Low cost, monolithic technology
Application-specific or in-system programming modes
Opptional user software-controlled automation
Opptional e-trim of any standard/custom configuration
Micropower operation
Available in standard PDIP, SOIC and hermetic CDIP
packages
Suitable for matched-pair balanced circuit configuration
Suitable for both coarse and fine trimming, as well as
matched MOSFET array applications
RoHS compliant
ALD1108E/ALD1110E
Advanced Linear Devices
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